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Method of obtaining functional layers based on nanocrystalline silicon carbide

Country of Origin: Ukraine
Reference Number: TOUA20200722001
Publication Date: 22 July 2020

Summary

A Ukrainian University offers a method of direct ion deposition to obtain films of nanocrystalline silicon carbide (nc-SiC), which have high resistance to harsh mechanical, radiation, chemical, thermal effects, as well as properties associated with dimensional quantum effects. The University is looking for partners in the electronics, engineering, energy industries, the desired type of cooperation - financial agreement.

Description

A Ukrainian University offers an original (unparalleled) direct ion deposition method for producing nanocrystalline silicon carbide (nc-SiC) films which possess both bulk silicon carbide properties (resistance to harsh mechanical, radiation, chemical, thermal effects) and properties associated with dimensional quantum effects (anomalously large values of second and third order optical nonlinearity, polariton effects, etc.).
Also, using the same technology, it is possible to obtain films of boron nitride of cubic modification (diamond analog), for the production of which there are no technologies at all.
The direct ion deposition method allows the formation of thin layers of cubic nanocrystalline SiC, rhombohedral (15R, 21R, 24R, 27R, 33R, 51R), hexagonal (6H, 8H) polytypes with nanocrystal sizes in the range 5-100 nm, with a nanocrystalline phase content of ~ 80%. It is impossible to obtain layers of nanocrystalline SiC with such parameters by other known technologies.
Preliminary studies of the properties of nc-SiC films performed by the university specialists showed a complex of unique mechanical, electronic, and electrophysical properties that meet modern requirements for electronic materials.
The obtained nc-SiC films have high values of nonlinear susceptibilities of the second and third order, nonlinear defect-induced magnetic properties, and electrophysical properties resistant to external influences, the ability to exhibit collective quantum properties in a natural microcavity at room temperatures, chemical resistance properties in gaseous media. These and other obtained data show the huge applied potential of nc-SiC films for use in various fields of physical instrumentation for use in severe external influences (radiation, thermal, chemical, etc.).
Due to the fact that nc-SiC films have excellent mechanical, thermophysical, and chemically inert properties, they have been used to develop a wide range of protective coatings for welding equipment elements exposed to molten metal spray and temperature. These coatings, which include, in addition to nc-SiC, carbides of transition and refractory metals, significantly increase the service life of continuous welding machines, which are critical for automatic lines and can reduce the cost of the process by 10-15%.
The University is looking for partners in the field of electronic technology who would be interested in the use of technology and have the opportunity to finance the creation of pilot samples of equipment. The preferred form of cooperation is the financial agreement.

Advantages and Innovations

The method allows to obtain nc-SiC films:
- resistant to severe mechanical, radiation, chemical, thermal effects,
- with abnormally large values of optical nonlinearity of the second and third order and polariton effects.
Additionally, the method allows to obtain boron nitride films of cubic modification (diamond analogue), other methods of obtaining which are not known to university specialists.
The use of nc-SiC layers to protect the elements of welding equipment showed up to 10-15% reduction in the cost of the process.

Stage Of Development

Available for demonstration

Stage Of Development Comment

Currently, a laboratory version of the technological installation has been developed, on which the basics of the technology for producing nc-SiC films have been worked out, samples have been obtained, and functional and protective properties have been studied. For the development of technology, it is necessary to manufacture a pilot plant and refine industrial technology.

Requested partner

The University is looking for partners in the electronics, engineering and energy industries who would be interested in using the technology and able to fund the production of pilot plants for the production of functional films of nanocrystalline silicon carbide for a wide range of uses.
Examples of the use of nc-SiC films in relation to their properties:
- Cubic nonlinear susceptibility:
Optical systems for transmitting and processing information, optical computers, laser power limiters, radiation modulators.
- Quadratic nonlinear susceptibility:
Emission frequency multipliers, terahertz radiation generators.
- Magnetic properties:
Spin information systems, optical polarization of nuclear spins.
- Electrophysical properties:
Gas sensors. Photo-thermoelectric sensors and generators, microelectromechanical sensors.
- Mechanical and thermophysical properties:
Protective coatings for welding torches of robots, automatic and semi-automatic.

Cooperation offer ist closed for requests